CR3PM-12-A8 datasheet(3/8 Pages) RENESAS

Part #	CR3PM-12-A8

Description	Thyristor Low Power Use

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 8 page

CR3PM-12

Rev.2.00,

Mar.01.2005,

page 3 of 7

Performance Curves

Maximum On-State Characteristics

On-State Voltage (V)

Rated Surge On-State Current

Conduction Time (Cycles at 60Hz)

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

Time (s)

Gate Trigger Voltage vs.

Junction Temperature

Junction Temperature (°C)

Gate Current (mA)

Gate Trigger Current vs.

Junction Temperature

Junction Temperature (°C)

Gate Characteristics

100

23

7

5101

40

20

102

42 3

7

5

4

60

80

100

30

10

50

70

90

0

3.8

0.6

1.4

2.2

3.0

1.0

1.8

2.6

3.4

102

7

5

3

2

101

7

5

3

2

100

7

5

3

2

10–1

100

57

100

23

57101

23

57102

23

10–1

7

10–1

7

5

3

2

101

7

5

3

2

102

7

5

3

2

VFGM = 6V

VGT = 0.8V

IFGM = 0.3A

PGM = 0.5W

VGD = 0.1V

120

60

–20

–40

0

20

40

80 100

103

7

5

3

2

102

7

5

3

2

101

7

5

3

2

100

# 2

# 1

IGT (25°C)

# 1 45

µA

# 2 18

µA

23

100

57 101 23 5 7 102 23 5 7 103

100

23

10–3

5710–2 23 5 710–1 23 5 7 100

102

7

5

3

2

101

7

5

3

2

7

5

3

2

10–1

1.0

0.7

0.6

0.3

0.2

0

120

–40 –20

20

80

0.1

0.5

0.4

0.8

0.9

060

40

100

Tc = 25°C

IGT = 100

µA

(Tj = 25°C)

Typical Example

Distribution

PG(AV) = 0.1W

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