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FS70VSJ-06F-T11 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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FS70VSJ-06F-T11 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.1.00, Aug.20.2004, page 1 of 6 FS70VSJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0265-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4 V • V DSS : 60 V • r DS(ON) (max) : 7.0 m Ω • I D : 70 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 70 ns Outline TO-220S 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 3 2, 4 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS 60 V VGS = 0 V Gate-source voltage VGSS ±20 V VDS = 0 V Drain current ID 70 A Drain current (Pulsed) IDM 280 A Avalanche current (Pulsed) IDA 70 A L = 10 µH Source current IS 70 A Source current (Pulsed) ISM 280 A Maximum power dissipation PD 125 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 1.2 g Typical value |
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