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FX6KMJ-2 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # FX6KMJ-2
Description  High-Speed Switching Use Pch Power MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FX6KMJ-2 Datasheet(HTML) 2 Page - Renesas Technology Corp

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FX6KMJ-2
Rev.1.00, Aug.20.2004, page 2 of 6
Electrical Characteristics
(Tch = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Drain-source breakdown voltage
V(BR)DSS
–100
V
ID = –1 mA, VGS = 0 V
Gate-source leakage current
IGSS
——
±0.1
µAVGS = ±20 V, VDS = 0 V
Drain-source leakage current
IDSS
–0.1
mA
VDS = –100 V, VGS = 0 V
Gate-source threshold voltage
VGS(th)
–1.0
–1.5
–2.0
V
ID = –1 mA, VDS = –10 V
Drain-source on-state resistance
rDS(ON)
0.46
0.58
ID = –3 A, VGS = –10 V
Drain-source on-state resistance
rDS(ON)
0.55
0.72
ID = –3 A, VGS = – 4 V
Drain-source on-state voltage
VDS(ON)
–1.38
–1.74
V
ID = –3 A, VGS = –10 V
Forward transfer admittance
| yfs |—
4.7
S
ID = –3 A, VDS = – 5 V
Input capacitance
Ciss
1110
pF
Output capacitance
Coss
108
pF
Reverse transfer capacitance
Crss
44
pF
VDS = –10 V, VGS = 0 V,
f = 1MHz
Turn-on delay time
td(on)
—9
ns
Rise time
tr
—8
ns
Turn-off delay time
td(off)
—72—
ns
Fall time
tf
—33—
ns
VDD = – 50 V, ID = –3 A,
VGS = –10 V,
RGEN = RGS = 50
Source-drain voltage
VSD
–1.0
–1.5
V
IS = –3 A, VGS = 0 V
Thermal resistance
Rth(ch-c)
6.25
°C/W
Channel to case
Reverse recovery time
trr
—80—
ns
IS = – 6 A, dis/dt = 100 A/
µs


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