BCR08AM-12A

REJ03G0343-0200

Rev.2.00

Nov 30, 2007

Page 2 of 6

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

0.8

A

Commercial frequency, sine full wave

360° conduction, Tc = 56

°C

Surge on-state current

8

A

60Hz sinewave 1 full cycle, peak value,

non-repetitive

I

I

0.26

A

Value corresponding to 1 cycle of half

wave 60Hz, surge on-state current

Peak gate power dissipation

1

W

Average gate power dissipation

0.1

W

Peak gate voltage

6

V

Peak gate current

0.5

A

Junction temperature

Tj

– 40 to +125

°C

Storage temperature

Tstg

– 40 to +125

°C

Mass

—

0.23

g

Typical value

Notes: 1. Gate open.

Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak off-state current

—

—

1.0

mA

Tj = 125

On-state voltage

—

—

2.0

V

Tc = 25

Instantaneous measurement

ΙΙ

—

—

2.0

V

Gate trigger voltage

Note2

ΙΙΙ

—

—

2.0

V

Tj = 25

Ω

ΙΙ

—

—

5

mA

Gate trigger current

Note2

ΙΙΙ

—

—

5

mA

Tj = 25

Ω

Gate non-trigger voltage

0.1

—

—

V

Tj = 125

Thermal resistance

—

—

60

°C/W

Junction to case

Note3

Critical-rate of rise of off-state

commutating voltage

Note4

(dv/dt)c

0.5

—

—

V/

µs

Tj = 125

°C

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Tj = 125

°C

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.4 A/ms

3. Peak off-state voltage

Supply Voltage

Time

Time

Time

Main Current

Main Voltage

(di/dt)c

(dv/dt)c