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H5N2508DS Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # H5N2508DS
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N2508DS Datasheet(HTML) 2 Page - Renesas Technology Corp

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H5N2508DL, H5N2508DS
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
7
A
Drain peak current
ID (pulse)
Note 1
28
A
Body-drain diode reverse drain current
IDR
7
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note 1
28
A
Avalanche current
IAP
Note 3
7
A
Channel dissipation
Pch
Note 2
30
W
Channel to case thermal Impedance
θ ch-c
4.17
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Tch
≤ 150°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
250
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Zero gate voltage drain current
IDSS
1
µA
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
3.0
4.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state resistance
RDS (on)
0.48
0.63
ID = 3.5 A, VGS = 10 V
Note 4
Forward transfer admittance
|yfs|
3.0
5.0
S
ID = 3.5 A, VDS = 10 V
Note 4
Input capacitance
Ciss
450
pF
Output capacitance
Coss
60
pF
Reverse transfer capacitance
Crss
12
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
19
ns
Rise time
tr
14
ns
Turn-off delay time
td (off)
47
ns
Fall time
tf
11
ns
VDD = 125 V, ID = 3.5 A
VGS = 10 V
RL = 35.7
Rg = 10
Total gate charge
Qg
13
nC
Gate to source charge
Qgs
2.5
nC
Gate to drain charge
Qgd
6
nC
VDD = 200 V
VGS = 10 V
ID = 7 A
Body-drain diode forward voltage
VDF
0.9
1.4
V
IF = 7 A, VGS = 0
Body-drain diode reverse recovery time
trr
100
ns
Body-drain diode reverse recovery charge
Qrr
0.38
µC
IF = 7 A, VGS = 0
diF/dt = 100 A/
µs
Note:
4. Pulse test


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