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H5N2508DS Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H5N2508DS Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page H5N2508DL, H5N2508DS Rev.2.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS ±30 V Drain current ID 7 A Drain peak current ID (pulse) Note 1 28 A Body-drain diode reverse drain current IDR 7 A Body-drain diode reverse drain peak current IDR (pulse) Note 1 28 A Avalanche current IAP Note 3 7 A Channel dissipation Pch Note 2 30 W Channel to case thermal Impedance θ ch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 250 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 250 V, VGS = 0 Gate to source cutoff voltage VGS (off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS (on) — 0.48 0.63 Ω ID = 3.5 A, VGS = 10 V Note 4 Forward transfer admittance |yfs| 3.0 5.0 — S ID = 3.5 A, VDS = 10 V Note 4 Input capacitance Ciss — 450 — pF Output capacitance Coss — 60 — pF Reverse transfer capacitance Crss — 12 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 19 — ns Rise time tr — 14 — ns Turn-off delay time td (off) — 47 — ns Fall time tf — 11 — ns VDD = 125 V, ID = 3.5 A VGS = 10 V RL = 35.7 Ω Rg = 10 Ω Total gate charge Qg — 13 — nC Gate to source charge Qgs — 2.5 — nC Gate to drain charge Qgd — 6 — nC VDD = 200 V VGS = 10 V ID = 7 A Body-drain diode forward voltage VDF — 0.9 1.4 V IF = 7 A, VGS = 0 Body-drain diode reverse recovery time trr — 100 — ns Body-drain diode reverse recovery charge Qrr — 0.38 — µC IF = 7 A, VGS = 0 diF/dt = 100 A/ µs Note: 4. Pulse test |
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