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H5N2801P Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # H5N2801P
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N2801P Datasheet(HTML) 7 Page - Renesas Technology Corp

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H5N2801P
Rev.1.00, Oct.01.2003, page 7 of 9
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature
Tc (
°C)
Gate to Source Cutoff Voltage
vs. Case Temperature
VDS = 10 V
Vin Monitor
D.U.T.
Vin
10 V
R L
V
= 140 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
Ω
90%
10%
t f
Source to Drain Voltage
VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Switching Time Test Circuit
Waveform
VGS = 0 V
10 V
5 V
ID = 10mA
1mA
0.1mA


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