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H5N5007P-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H5N5007P-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page H5N5007P Rev.4.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 25 A Drain peak current ID (pulse) Note 1 100 A Body-drain diode reverse drain current IDR 25 A Avalanche current IAP Note 3 7 A Channel dissipation Pch Note 2 150 W Channel to case thermal Impedance θ ch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 500 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 500 V, VGS = 0 Gate to source cutoff voltage VGS (off) 3.0 — 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS (on) — 0.18 0.225 Ω ID = 12.5 A, VGS = 10 V Note 4 Forward transfer admittance |yfs| 14 24 — S ID = 12.5 A, VDS = 10 V Note 4 Input capacitance Ciss — 3900 — pF Output capacitance Coss — 375 — pF Reverse transfer capacitance Crss — 78 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 55 — ns Rise time tr — 110 — ns Turn-off delay time td (off) — 225 — ns Fall time tf — 110 — ns ID = 12.5 A VGS = 10 V RL = 20 Ω Rg = 10 Ω Total gate charge Qg — 135 — nC Gate to source charge Qgs — 22 — nC Gate to drain charge Qgd — 74 — nC VDD = 400 V VGS = 10 V ID = 25 A Body-drain diode forward voltage VDF — 0.9 1.4 V IF = 25 A, VGS = 0 Body-drain diode reverse recovery time trr — 390 — ns Body-drain diode reverse recovery charge Qrr — 5 — µC IF = 25 A, VGS = 0 diF/dt = 100 A/ µs Note: 4. Pulse test |
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