H5N5006LSTL-E datasheet(3/8 Pages) RENESAS

Part #	H5N5006LSTL-E

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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3 / 8 page

H5N5006LD, H5N5006LS, H5N5006LM

Rev.1.00 Apr 07, 2006 page 3 of 7

Main Characteristics

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

5

4

3

2

1

0

5

4

3

2

1

0

02468

10

Tc = 75°C

25°C

–25°C

10

1

0.1

0.01

0.005

0.1 0.3

1

3

30

300

10

100

1000

VDS = 10 V

Pulse Test

50

Ta = 25°C

Operation in

this area is

limited by RDS (on)

80

0

20

40

60

50

100

150

200

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

20

16

12

8

4

0

04

8

12

16

20

2

1

0.2

0.5

0.1

0.5

2

5

Pulse Test

ID = 3 A

1 A

2 A

0.1

1

10

0.2

10

5

VGS = 10 V, 15 V

Pulse Test

100

µs

10

µs

04

8

12

16

20

10 V

6 V

8 V

5.5 V

Pulse Test

VGS = 4.5 V

5 V

PW = 10 ms (1shot)

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