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AP9435GH Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9435GH Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS -30V ▼ Simple Drive Requirement RDS(ON) 50mΩ ▼ Fast Switching ID - 20A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 201017075-1/4 AP9435GH/J Rating - 30 ±20 - 20 0.1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Linear Derating Factor Storage Temperature Range Continuous Drain Current -13 Pulsed Drain Current 1 -60 RoHS-compliant Product Thermal Data Parameter Total Power Dissipation 12.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. The TO-252/TO-251 package is widely used for commercial-industrial application. G D S G D S TO-252(H) G D S TO-251(J) |
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