HAT1089C datasheet(4/7 Pages) RENESAS

Part #	HAT1089C

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

HAT1089C

R07DS1170EJ0400 Rev.4.00

Page 4 of 6

Mar 19, 2014

250

200

150

100

50

–25

0

25

50

75

100 125

150

0

–0.01

–10

10

1.0

0.1

0.01

–0.1

–1.0

25

°C

Tc = –25

°C

75

°C

VDS = –10 V

Pulse Test

0

–10

–20

1000

100

0

–2

–4

1.6

3.2

4.8

6.4

8.0

–8

1000

100

1

10

–0.1

–1.0

–10

10

ID = –2 A

VDD

Gate Charge

Qg (nC)

Dynamic Input Characteristics

Switching Characteristics

VDD = –5 V

–10 V

–20 V

VDD = –5 V

–10 V

–20 V

–5

–15

0

–0.4

–0.8

–1.2

–1.6

–2.0

–10

–4

VGS = –5 V

VGS = 0, 5 V

Pulse Test

–2

–6

–8

ID = –2 A

ID = –0.5 A

VGS = –2.5 V

–4

VGS = –4.5 V

ID = –1 A, –2 A, –0.5 A

Coss

Ciss

VGS = –4.5 V, VDD = 10 V

RG = 4.7 Ω, Ta = 25°C

td(off)

td(on)

tr

tf

ID = –1 A

VGS = 0

f = 1 MHz

Crss

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Typical Capacitance vs.

Drain to Source Voltage

Case Temperature

Tc (

°C)

Drain Current

ID (A)

Drain to Source Voltage

VDS (V)

Drain Current

ID (A)

Reverse Drain Current vs.

Source to Drain Voltage

VSD (V)

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