HAT1089C-EL-E datasheet(2/7 Pages) RENESAS

Part #	HAT1089C-EL-E

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

HAT1089C

R07DS1170EJ0400 Rev.4.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to Source breakdown voltage

V(BR)DSS

–20

—

V

ID = –10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±12

—

V

IG =

±100 μA, VDS = 0

Gate to Source leakage current

IGSS

—

±10

μA

VGS =

±10 V, VDS = 0

Drain to Source leakage current

IDSS

—

–1

μA

VDS = –20 V, VGS = 0

Gate to Source cutoff voltage

VGS(th)

–0.4

—

–1.4

V

ID = –1 mA, VDS = –10 V

Note3

Drain to Source on state resistance

RDS(on)

—

79

103

m

Ω

ID = –1 A, VGS = –4.5 V

Note3

RDS(on)

—

120

168

m

Ω

ID = –1 A, VGS = –2.5 V

Note3

Forward transfer admittance

| yfs |

2

3.5

—

S

ID = –1 A, VDS = –10 V

Note3

Input capacitance

Ciss

—

365

—

pF

VDS = –10 V, VGS = 0,

f = 1 MHz

Output capacitance

Coss

—

105

—

pF

Reverse transfer capacitance

Crss

—

70

—

pF

Total gate charge

Qg

—

4.5

—

nC

VDS = –10 V, VGS = –4.5 V,

ID = –2 A

Gate to Source charge

Qgs

—

0.6

—

nC

Gate to Drain charge

Qgd

—

1.6

—

nC

Turn - on delay time

td(on)

—

15

—

ns

VDS = –10 V, VGS = –4.5 V,

ID = -–1 A, RL = 10

Ω,

Rg = 4.7

Ω

Rise time

tr

—

25

—

ns

Turn - off delay time

td(off)

—

35

—

ns

Fall time

tf

—

15

—

ns

Body - Drain diode forward voltage

VDF

—

–0.8

–1.1

V

IF = –2 A, VGS = 0

Notes: 3. Pulse test

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