Electronic Components Datasheet Search |
|
HAT2022R-EL-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
|
HAT2022R-EL-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page HAT2022R Rev.12.00 Sep 07, 2005 page 4 of 6 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 0.05 0.04 0.01 0.02 0.03 –40 0 40 80 120 160 0 ID = 2 A, 5 A, 10 A 2 A, 5 A, 10 A 10 V VGS = 4 V 0.2 0.5 1 2 5 10 20 50 20 5 10 2 0.5 1 25°C Tc = –25°C 75°C Pulse Test VDS = 10 V Pulse Test Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics 0.2 0.5 1 2 5 10 20 500 200 100 20 50 10 5 di / dt = 20 A / µs VGS = 0, Ta = 25°C 010 20 30 40 50 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz 50 0 10 20 30 40 0 20 20 40 60 80 100 0 4 8 12 16 VGS VDS ID = 11 A 1000 500 200 50 100 20 10 0.5 1 2 5 10 20 0.2 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = 5 V 10 V 25 V VDD = 25 V 10 V 5 V VGS = 4 V, VDD = 10 V PW = 3 µs, duty ≤ 1 % |
Similar Part No. - HAT2022R-EL-E |
|
Similar Description - HAT2022R-EL-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |