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HAT2028R Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2028R Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page HAT2028R, HAT2028RJ Rev.5.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 4 A Drain peak current ID (pulse) Note 1 32 A Body-drain diode reverse drain current IDR 4 A HAT2028R — — Avalanche current HAT2028RJ IAP Note 4 4 A HAT2028R — — Avalanche energy HAT2028RJ EAR Note 4 1.37 mJ Channel dissipation Pch Note 2 2 W Channel dissipation Pch Note 3 3 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 HAT2028R IDSS — — 1 µA Zero gate voltage drain current HAT2028RJ IDSS — — 0.1 µA VDS = 60 V, VGS = 0 HAT2028R IDSS — — — µA Zero gate voltage drain current HAT2028RJ IDSS — — 10 µA VDS = 48 V, VGS = 0 Ta = 125 °C Gate to source cutoff voltage VGS (off) 1.3 — 2.3 V VDS = 10 V, ID = 1 mA RDS (on) — 0.08 0.1 Ω ID = 2 A, VGS = 10 V Note 5 Static drain to source on state resistance RDS (on) — 0.12 0.16 Ω ID = 2 A, VGS = 4 V Note 5 Forward transfer admittance |yfs| 3.3 5 — S ID = 2 A, VDS = 10 V Note 5 Input capacitance Ciss — 280 — pF Output capacitance Coss — 150 — pF Reverse transfer capacitance Crss — 55 — pF VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 15 — ns Rise time tr — 100 — ns Turn-off delay time td (off) — 35 — ns Fall time tf — 45 — ns VGS = 4 V, ID = 2 A, VDD ≅ 30 V Body-drain diode forward voltage VDF — 0.88 1.15 V IF = 4 A, VGS = 0 Note 5 Body-drain diode reverse recovery time trr — 40 — ns IF = 4 A, VGS = 0 diF/dt = 50 A/ µs Note: 5. Pulse test |
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