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HAT2033RJ-EL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2033RJ-EL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  HAT2033R, HAT2033RJ Rev.4.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 7 A Drain peak current ID (pulse) Note 1 56 A Body-drain diode reverse drain current IDR 7 A HAT2033R — — Avalanche current HAT2033RJ IAP Note 4 7 A HAT2033R — — Avalanche energy HAT2033RJ EAR Note 4 4.2 mJ Channel dissipation Pch Note 2 2.5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 HAT2033R IDSS — — 1 µA Zero gate voltage drain current HAT2033RJ IDSS — — 0.1 µA VDS = 60 V, VGS = 0 HAT2033R IDSS — — — µA Zero gate voltage drain current HAT2033RJ IDSS — — 10 µA VDS = 48 V, VGS = 0 Ta = 125 °C Gate to source cutoff voltage VGS (off) 1.2 — 2.2 V VDS = 10 V, ID = 1 mA RDS (on) — 0.03 0.038 Ω ID = 4 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 0.04 0.053 Ω ID = 4 A, VGS = 4 V Note 4 Forward transfer admittance |yfs| 6.5 10 — S ID = 4 A, VDS = 10 V Note 4 Input capacitance Ciss — 740 — pF Output capacitance Coss — 370 — pF Reverse transfer capacitance Crss — 130 — pF VDS = 10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 13 — ns Rise time tr — 55 — ns Turn-off delay time td (off) — 140 — ns Fall time tf — 95 — ns VGS = 10 V, ID = 4 A, VDD ≅ 30 V Body-drain diode forward voltage VDF — 0.82 1.07 V IF = 7 A, VGS = 0 Note 4 Body-drain diode reverse recovery time trr — 45 — ns IF = 7 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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