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HAT2077R Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2077R Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page HAT2077R Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±30 V Drain current ID 3 A Drain peak current ID (pulse) Note 1 24 A Body-drain diode reverse drain current IDR 3 A Channel dissipation Pch Note 2 2.5 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 200 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS (off) 3.0 — 4.5 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS (on) — 0.18 0.235 Ω ID = 1.5 A, VGS = 10 V Note 3 Forward transfer admittance |yfs| 2.3 3.8 — S ID = 1.5 A, VDS = 10 V Note 3 Input capacitance Ciss — 830 — pF Output capacitance Coss — 115 — pF Reverse transfer capacitance Crss — 23 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 23 — ns Rise time tr — 10 — ns Turn-off delay time td (off) — 70 — ns Fall time tf — 10 — ns VDD ≅ 100 V, ID = 1.5 A VGS = 10 V RL = 66.7 Ω Rg = 10 Ω Total gate charge Qg — 23 — nC Gate to source charge Qgs — 3.5 — nC Gate to drain charge Qgd — 10 — nC VDD = 160 V VGS = 10 V ID = 3 A Body-drain diode forward voltage VDF — 0.75 1.15 V IF = 3 A, VGS = 0 Note 3 Body-drain diode reverse recovery time trr — 75 — ns IF = 3 A, VGS = 0 diF/dt = 100 A/ µs Note: 3. Pulse test |
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