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HAT2126RP Datasheet(PDF) 10 Page - Renesas Technology Corp

Part # HAT2126RP
Description  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2126RP Datasheet(HTML) 10 Page - Renesas Technology Corp

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HAT2126RP
Rev.4, Dec. 2002, page 8 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pul
se
DM
P
PW
T
D =
PW
T
ch - f(t) = s (t) x
ch - f
ch - f = 110
°C/W, Ta = 25°C
θ
γ
θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0
0.4
0.8
1.2
1.6
2.0
20
10
V
= 0V, -5 V
GS
5 V
Source to Drain Voltage
V
(V)
SD
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
10 V


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