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HAT2140H Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HAT2140H Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 4 page  HAT2140H Rev.4.00 Sep 07, 2005 page 2 of 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 25 A Drain peak current ID (pulse) Note 1 100 A Body-drain diode reverse drain current IDR 25 A Avalanche current IAP Note 3 25 A Avalanche energy EAR Note 3 62.5 mJ Channel dissipation Pch Note 2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage VGS (off) 2.0 — 3.5 V VDS = 10 V, ID = 1 mA RDS (on) — 12.5 16.0 m Ω ID = 12.5 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 13.5 18.0 m Ω ID = 12.5 A, VGS = 7 V Note 4 Forward transfer admittance |yfs| 27 45 — S ID = 12.5 A, VDS = 10 V Note 4 Input capacitance Ciss — 6500 — pF Output capacitance Coss — 480 — pF Reverse transfer capacitance Crss — 210 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 105 — nC Gate to source charge Qgs — 20 — nC Gate to drain charge Qgd — 22 — nC VDD = 50 V VGS = 10 V ID = 25 A Turn-on delay time td (on) — 25 — ns Rise time tr — 24 — ns Turn-off delay time td (off) — 100 — ns Fall time tf — 12 — ns VGS = 10 V, ID = 12.5 A VDD ≅ 30 V RL = 2.4 Ω Rg = 4.7 Ω Body-drain diode forward voltage VDF — 0.83 1.08 V IF = 25 A, VGS = 0 Note 4 Body-drain diode reverse recovery time trr — 55 — ns IF = 25 A, VGS = 0 diF/dt = 100 A/ µs Note: 4. Pulse test |
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