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HAT2168H-EL-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT2168H-EL-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page HAT2168H Rev.7.00 Sep 20, 2005 page 4 of 7 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Drain Current ID (A) Switching Characteristics Gate Charge Qg (nc) Dynamic Input Characteristics 20 16 12 8 4 -25 0 25 50 75 100 125 150 0 ID = 20 A 5 A, 10 A, 20 A VGS = 4.5 V 10 V Pulse Test 330 0.1 1 10 100 0.3 10 100 30 1 0.3 3 0.1 Tc = -25 °C VDS = 10 V Pulse Test 75 °C 25 °C 10 A, 5 A 0.1 0.3 1 3 10 30 100 20 50 10 0 5 10 15 20 30 25 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz 100 30 10 1 3 0.3 1 3 10 30 100 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 , duty ≤ 1 % Ω tf td(on) 100 50 40 30 20 10 0 20 16 12 8 4 816 24 32 40 0 ID = 30 A VGS VDS VDD = 25 V 10 V 5 V VDD = 25 V 10 V 5 V di/dt = 100 A/ µs VGS = 0, Ta = 25°C td(off) tr |
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