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BB301M Datasheet(PDF) 5 Page - Renesas Technology Corp |
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BB301M Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 8 page  BB301M Rev.3.00 Aug 10, 2005 page 5 of 7 0 1 234 5 0 12 34 5 30 25 20 15 10 5 30 25 20 15 10 5 VDS = 5 V RG = 82 kΩ f = 1 kHz VG2S = 1 V 4 V 3 V 2 V 4 V 3 V VG2S = 1 V VDS = 5 V RG = 100 kΩ f = 1 kHz 2 V Forward Transfer Admittance vs. Gate1 Voltage Gate1 Voltage VG1 (V) Forward Transfer Admittance vs. Gate1 Voltage Gate1 Voltage VG1 (V) 20 16 12 8 4 0 12 3 4 5 Forward Transfer Admittance vs. Gate1 Voltage Gate1 Voltage VG1 (V) VDS = 5 V RG = 150 kΩ f = 1 kHz VG2S = 1 V 4 V 3 V 2 V Power Gain vs. Gate Resistance 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 Gate Resistance RG (kΩ) 30 25 20 15 10 5 0 Power Gain vs. Drain Current Drain Current ID (mA) 510 15 20 25 30 VDS = 5 V VG1 = 5 V VG2S = 4 V RG = variable f = 200 MHz VDS = 5 V VG1 = 5 V VG2S = 4 V f = 200 MHz Noise Figure vs. Gate Resistance 0 Gate Resistance RG (kΩ) 4 3 2 1 10 20 50 100 200 500 1000 VDS = 5 V VG1= 5 V VG2S = 4 V f = 200 MHz |
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Similar Description - BB301M |
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