BB301MAW-TL-E datasheet(2/8 Pages) RENESAS

Part #	BB301MAW-TL-E

Description	Built in Biasing Circuit MOS FET IC VHF RF Amplifier

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 8 page

BB301M

Rev.3.00 Aug 10, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDS

6

V

Gate1 to source voltage

VG1S

+6

–0

V

Gate2 to source voltage

VG2S

±6

V

Drain current

ID

25

mA

Channel power dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

6

—

V

ID = 200

µA, VG1S = VG2S = 0

Gate1 to source breakdown voltage

V(BR)G1SS

+6

—

V

IG1 = +10

µA, VG2S = VDS = 0

Gate2 to source breakdown voltage

V(BR)G2SS

±6

—

V

IG2 = ±10

µA, VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

+100

nA

VG1S = +5 V, VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

±100

nA

VG2S = ±5 V, VG1S = VDS = 0

Gate1 to source cutoff voltage

VG1S(off)

0.4

—

1.0

V

VDS = 5 V, VG2S = 4 V

ID = 100

µA

Gate2 to source cutoff voltage

VG2S(off)

0.4

—

1.0

V

VDS = 5 V, VG1S = 5 V

ID = 100

µA

Drain current

ID(op)

10

15

20

mA

VDS = 5 V, VG1 = 5 V

VG2S = 4 V, RG = 100 k

Ω

Forward transfer admittance

|yfs|

15

20

—

mS

VDS = 5 V, VG1 = 5 V, VG2S =4 V

RG = 100 k

Ω, f = 1 kHz

Input capacitance

Ciss

2.2

3.0

3.9

pF

VDS = 5 V, VG1 = 5 V

Output capacitance

Coss

0.9

1.2

1.6

pF

VG2S =4 V, RG = 100 k

Ω

Reverse transfer capacitance

Crss

—

0.018

0.04

pF

f = 1 MHz

Power gain

PG

22

26

—

dB

VDS = 5 V, VG1 = 5 V, VG2S =4 V

Noise figure

NF

—

1.3

1.9

dB

RG = 100 k

Ω, f = 200 MHz

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