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BB302MBW-TL-E Datasheet(PDF) 6 Page - Renesas Technology Corp |
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BB302MBW-TL-E Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page BB302M Rev.4.00 Aug 10, 2005 page 6 of 9 60 50 40 30 20 10 0 12 3 45 0 510 15 20 25 30 4 3 2 1 0 123 4 5 VDS = 9 V VG1= 9 V VG2S = 6 V RG = variable f = 200 MHz VDS = 9 V VG1 = 9 V VG2S = 6 V RG = 120 kΩ f = 200 MHz 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 VDS = 9 V VG1 = 9 V VG2S = 6 V 6 7 6 6 5 4 3 2 1 VDS = 9 V VG1 = 9 V RG = 120 kΩ f = 1 MHz Gain Reduction vs. Gate2 to Source Voltage Gate2 to Source Voltage VG2S (V) Noise Figure vs. Drain Current Drain Current ID (mA) Input Capacitance vs. Gate2 to Source Voltage Gate2 to Source Voltage VG2S (V) Drain Current vs. Gate Resistance Gate Resistance RG (kΩ) |
Similar Part No. - BB302MBW-TL-E |
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