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BB302MBW-TL-E Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # BB302MBW-TL-E
Description  Built in Biasing Circuit MOS FET IC VHF RF Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB302MBW-TL-E Datasheet(HTML) 6 Page - Renesas Technology Corp

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BB302M
Rev.4.00 Aug 10, 2005 page 6 of 9
60
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10
0
12
3
45
0
510
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30
4
3
2
1
0
123
4
5
VDS = 9 V
VG1= 9 V
VG2S = 6 V
RG = variable
f = 200 MHz
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = 120 kΩ
f = 200 MHz
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100 200
500 1000
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
6
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1
VDS = 9 V
VG1 = 9 V
RG = 120 kΩ
f = 1 MHz
Gain Reduction vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)
Noise Figure vs. Drain Current
Drain Current ID (mA)
Input Capacitance vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate Resistance
Gate Resistance RG (kΩ)


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