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BB304CDW-TL-E Datasheet(PDF) 6 Page - Renesas Technology Corp |
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BB304CDW-TL-E Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 10 page BB304C Rev.6.00 Aug 10, 2005 page 6 of 9 60 50 40 30 20 10 0 12 3 4 5 0 510 15 20 25 30 4 3 2 1 0 123 4 5 VDS = 9 V VG1 = 9 V VG2S = 6 V RG = variable f = 200 MHz VDS = 9 V VG1 = 9 V VG2S = 6 V RG = 470 kΩ f = 200 MHz 30 25 20 15 10 5 0 0.1 0.2 0.5 1 2 5 10 VDS = 9 V VG1 = 9 V VG2S = 6 V Drain Current vs. Gate Resistance Gain Reduction vs. Gate2 to Source Voltage Input Capacitance vs. Gate2 to Source Voltage Noise Figure vs. Drain Current Drain Current ID (mA) 6 7 6 6 5 4 3 2 1 VDS = 9 V VG1 = 9 V RG = 470 kΩ f = 1 MHz Gate Resistance RG (MΩ) Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) |
Similar Part No. - BB304CDW-TL-E |
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