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BB304CDW-TL-E Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # BB304CDW-TL-E
Description  Built in Biasing Circuit MOS FET IC VHF RF Amplifier
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB304CDW-TL-E Datasheet(HTML) 6 Page - Renesas Technology Corp

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BB304C
Rev.6.00 Aug 10, 2005 page 6 of 9
60
50
40
30
20
10
0
12
3
4
5
0
510
15
20
25
30
4
3
2
1
0
123
4
5
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = variable
f = 200 MHz
VDS = 9 V
VG1 = 9 V
VG2S = 6 V
RG = 470 kΩ
f = 200 MHz
30
25
20
15
10
5
0
0.1
0.2
0.5
1
2
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VDS = 9 V
VG1 = 9 V
VG2S = 6 V
Drain Current vs. Gate Resistance
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
Noise Figure vs. Drain Current
Drain Current ID (mA)
6
7
6
6
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3
2
1
VDS = 9 V
VG1 = 9 V
RG = 470 kΩ
f = 1 MHz
Gate Resistance RG (MΩ)
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)


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