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BB501MAS-TL-E Datasheet(PDF) 7 Page - Renesas Technology Corp |
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BB501MAS-TL-E Datasheet(HTML) 7 Page - Renesas Technology Corp |
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7 / 11 page  BB501M Rev.6.00 Aug 10, 2005 page 7 of 10 0 1 2 3 4 10 100 20 50 4 3 2 1 0 20 15 10 5 0 25 20 15 10 5 0 1 23 4 VDS = 5 V RG = 47 kΩ f = 900 MHz 1 23 4 5 4 3 2 1 VDS = 5 V RG = 47 kΩ f = 900 MHz VDS = 5 V RG = 47 kΩ f = 1 MHz VDS = VG1 = 5 V VG2S = 4 V Gate Resistance RG (kΩ) Power Gain vs. Gate2 to Source Voltage Gate2 to Source Voltage VG2S (V) Drain Current vs. Gate Resistance Gate2 to Source Voltage VG2S (V) Gate2 to Source Voltage VG2S (V) Input Capacitance vs. Gate2 to Source Voltage Noise Figure vs. Gate2 to Source Voltage 4 0 10 20 30 40 50 3 2 1 0 VDS = VG1 = 5 V VG2S = 4 V RG = 47 kΩ Gain Reduction vs. Gate2 to Source Voltage Gate2 to Source Voltage VG2S (V) |
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