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H7N1002AB Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H7N1002AB Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 10 page Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 8 m Ω typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB 1 2 3 1. Gate 2. Drain (Flange) 3. Source D G S |
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