H7P0601DL datasheet(1/11 Pages) RENESAS

Part #	H7P0601DL

Description	Silicon P Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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1 / 11 page

Rev.1.00, Aug.05.2003, page 1 of 10

H7P0601DL, H7P0601DS

Silicon P Channel MOS FET

High Speed Power Switching

REJ03G0044-0100Z

Rev.1.00

Aug.05.2003

Features

• Low on-resistance

RDS(on) = 40 m

Ω typ.

• Low drive current

• 4.5 V gate drive device can driven from 5 V source

Outline

1 2

3

4

1 2

3

DPAK-2

DPAK-S

1. Gate

2. Drain

3. Source

4. Drain

H7P0601DL

H7P0601DS

D

G

S

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