Mar. 2002

✽2. Measurement using the gate trigger characteristics measurement circuit.

°C/W.

Junction to ambient

Unit

Repetitive peak off-state current

On-state voltage

Gate non-trigger voltage

Thermal resistance

Thermal resistance

Limits

Max.

2.0

1.5

1.5

1.5

1.5

—

3.8

50

!

@

#

!

@

#

Typ.

—

—

—

—

—

—

—

—

—

—

—

Min.

—

—

—

—

—

—

—

—

0.2

—

—

mA

V

V

V

V

mA

mA

mA

V

°C/W

°C/W

Symbol

Parameter

Test conditions

ELECTRICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR5KM

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

PERFORMANCE CURVES

Refer to the page 6 as to the product guaranteed

maximum junction temperature 150

°C

3.8

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4

7

5

3

2

7

5

3

2

7

5

3

2

°C

23

40

20

23

44

60

80

100

30

10

50

70

90

0

MAXIMUM ON-STATE

CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE

CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)