HAF1001 datasheet(6/8 Pages) RENESAS | Silicon P Channel MOS FET Series Power Switching

Part Name

Description

HAF1001

Silicon P Channel MOS FET Series Power Switching ( 8 Page)

RENESAS

6 page

HAF1001

Rev.4.00 Apr 27, 2006 page 6 of 7

–12

–10

–8

–4

–6

–2

0.0001

200

180

160

140

120

100

–2

–4

–6

–8

–10

ID = –5 A

0.001

0.01

0.1

–9 V

VDD = –36 V

–24 V

–12 V

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

Shutdown Time of Load-Short Test PW (S)

Shutdown Case Temperature vs.

Gate to Source Voltage

VGS (V)

td(on)

Vin

90%

10%

Vout

td(off)

90%

10%

Switching Time Test Circuit

Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

0.3

0.1

0.03

0.01

100

1 m

10 m

100 m

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

PDM

D =

θch – c (t) = γ s (t) • θch – c

θch – c = 2.50°C/W, Tc = 25°C

Vin Monitor

D.U.T.

Vin

–5 V

Vout

Monitor

Ω

VDD

= –30 V

1 2 3 4 5 6 7 8

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