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| HAF1001 |
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3 page 
HAF1001 Rev.4.00 Apr 27, 2006 page 3 of 7 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions ID1 –7 — — A VGS = –3.5 V, VDS = –2 V Drain current ID2 — — –10 mA VGS = –1.2 V, VDS = –2 V Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0 V (BR) GSS –16 — — V IG = –100 µA, VDS = 0 Gate to source breakdown voltage V (BR) GSS 3 — — V IG = 100 µA, VDS = 0 IGSS1 — — –100 µA VGS = –8 V, VDS = 0 IGSS2 — — –50 µA VGS = –3.5 V, VDS = 0 IGSS3 — — –1 µA VGS = –1.2 V, VDS = 0 Gate to source leak current IGSS4 — — 100 µA VGS = 2.4 V, VDS = 0 IGS (op) 1 — –0.8 — mA VGS = –8 V, VDS = 0 Input current (shut down) IGS (op) 2 — –0.35 — mA VGS = –3.5 V, VDS = 0 Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage VGS (off) –1.1 — –2.25 V ID = –1 mA, VDS = –10 V RDS (on) — 100 130 m Ω ID = –7.5 A, VGS = –4 V Note 3 Static drain to source on state resistance RDS (on) — 70 90 m Ω ID = –7.5 A, VGS = –10 V Note 3 Forward transfer admittance |yfs| 5 10 — S ID = –7.5 A, VDS = –10 V Note 3 Output capacitance Coss — 610 — pF VDS = –10 V, VGS = 0 f = 1 MHz Turn-on delay time td (on) — 7.5 — µs Rise time tr — 36 — µs Turn-off delay time td (off) — 32 — µs Fall time tf — 29 — µs ID = –7.5 A VGS = –5 V RL = 4 Ω Body-drain diode forward voltage VDF — –1.0 — V IF = –15 A, VGS = 0 Body-drain diode reverse recovery time trr — 200 — ns IF = –15 A, VGS = 0 diF/dt = 50 A/ µs tos1 — 3.7 — ms VGS = –5 V, VDD = –12 V Over load shut down operation time Note4 tos2 — 1 — ms VGS = –5 V, VDD = –24 V Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. |
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