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CT40TMH-8 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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CT40TMH-8 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 3 page Feb.1999 RECOMMEND CONDITION VCM = 330V IP = 180A CM = 1200 µF VGE = 28V MAXIMUM CONDITION 350V 200A 1500 µF IXe Vtrig VCE RG VG IGBT CM + VCM Vtrig VG Ixe 200 160 120 80 40 0 50 40 30 10 020 < TC = 70°C CM = 1500 µF – MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE VGE (V) TRIGGER SIGNAL Xe TUBE CURRENT VOLTAGE IGBT GATE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE PERFORMANCE CURVES APPLICATION EXAMPLE Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1500µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Figure 1 |
Similar Part No. - CT40TMH-8 |
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Similar Description - CT40TMH-8 |
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