STH18NB40FI datasheet(3/7 Pages) STMICROELECTRONICS

Part #	STH18NB40FI

Description	N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STW18NB40/STH18NB40FI

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 200 V, ID = 9.2 A

RG = 4.7Ω VGS = 10 V

(see test circuit, Figure 3)

27

ns

tr

14

ns

Qg

Total Gate Charge

VDD = 320V, ID = 18.4 A,

VGS = 10V

60

84

nC

Qgs

Gate-Source Charge

16

nC

Qgd

Gate-Drain Charge

28.3

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 320V, ID = 18.4 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

13

ns

tf

Fall Time

15

ns

tc

Cross-over Time

27

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

18.4

A

ISDM (2)

Source-drain Current (pulsed)

73.6

A

VSD (1)

Forward On Voltage

ISD = 18.4 A, VGS = 0

1.6

V

trr

Reverse Recovery Time

ISD = 18.4 A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

480

ns

Qrr

Reverse Recovery Charge

5.5

µC

IRRM

Reverse Recovery Current

23

A

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