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FY5AEJ-03 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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FY5AEJ-03 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page  PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Aug. 1999 30 — — 1.0 — — — — — — — — — — — — — V µA mA V m Ω m Ω S pF pF pF ns ns ns ns V °C/W ns MITSUBISHI POWER MOSFET FY5AEJ-03 HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 2A, VGS = 4V ID = 5A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50 Ω IS = 1.5A, VGS = 0V Channel to ambiet IS = 1.5A, dis/dt = –50A/ µs — — — 1.5 23 40 9 550 220 115 12 20 40 40 0.75 — 100 — ±0.1 0.1 2.0 30 55 — — — — — — — — 1.10 78.1 — –30 — — –1.5 — — — — — — — — — — — — — V µA mA V m Ω m Ω S pF pF pF ns ns ns ns V °C/W ns ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –4A, VGS = –10V ID = –2A, VGS = –4V ID = –4A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50 Ω IS = –1.5A, VGS = 0V Channel to ambiet IS =1.5A, dis/dt = 50A/ µs — — — –2.0 50 90 6 870 230 110 10 10 60 30 –0.88 — 100 — ±0.1 –0.1 –2.5 65 135 — — — — — — — — –1.20 73.5 — Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Parameter Test conditions V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Parameter Test conditions V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Min. Typ. Max. Unit Limits Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tch = 25 °C) N-ch P-ch |
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