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STW45NM60 Datasheet(PDF) 3 Page - STMicroelectronics |
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STW45NM60 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STW45NM60 Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 45 A ID Drain current (continuous) at TC = 100°C 28 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 180 A PTOT Total dissipation at TC = 25°C 417 W Derating factor 3.33 W/°C dv/dt (2) 2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature –65 to 150 °C Tj Max. operating junction temperature 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.3 °C/W Rthj-amb Thermal resistance junction-amb 30 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 850 mJ |
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