BIC702M datasheet(4/13 Pages) RENESAS

Part #	BIC702M

Description	Bias Controlled Monolithic IC VHF/UHF RF Amplifier

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 13 page

BIC702M

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DS

6V

Gate1 to source voltage

V

G1S

+6

–0

V

Gate2 to source voltage

V

G2S

+6

–0

V

Drain current

I

D

30

mA

Channel power dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

6—

—

V

I

D = 200µA

V

G2S = 0,VG1 = open

Gate1 to source breakdown

voltage

V

(BR)G1SS

+6

—

V

I

G1 = +10 µA, VG2S = VDS = 0

Gate2 to source breakdown

voltage

V

(BR)G2SS

+6

—

V

I

G2 = +10 µA, VG1S = VDS = 0

Gate2 to source cutoff current I

G2SS

—

+100

nA

V

G2S = +5V, VG1S = VDS = 0

Gate2 to source cutoff voltage V

G2S(off)

0.5

0.7

1.0

V

DS = 5V, ID = 100µA

V

G1 = open

Drain current

I

D(op)

10

13

16

mA

V

DS = 5V , VG2S = 4V

V

G1 = open

Forward transfer admittance

|y

fs|

2429

34mS

V

DS = 5V, ID = 13mA

V

G2S =4V, f = 1kHz

Input capacitance

c

iss

1.6

2.0

2.3

pF

V

DS = 5V, VG2S =4V

Output capacitance

c

oss

0.7

1.1

1.5

pF

V

G1 = open

Reverse transfer capacitance c

rss

—

0.02

0.05

pF

f = 1MHz

Power gain

PG1

24

28.5

—

dB

V

DS = 5V, VG2S =4V

V

G1 = open

Noise figure

NF1

—

1.0

1.5

dB

f = 200MHz

Power gain

PG2

18

23

—

dB

V

DS = 5V, VG2S =4V

V

G1 = open

Noise figure

NF2

—

1.6

2.2

dB

f = 900MHz

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