DG455 datasheet(4/9 Pages) VISHAY

Part #	DG455

Description	High Voltage 4-Ω Quad SPST CMOS Analog Switch

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Document Number: 74473

S-81306-Rev. D, 09-Jun-08

Vishay Siliconix

DG454/DG455/DG456

New Product

Notes:

a. VIN = input voltage to perform proper function.

b. Room = 25 °C, Full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e. Guaranteed by design, not subject to production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Unless Specified

V+ = 5 V, V- = - 5 V

VIN = 2.4 V, 0.8 V

a

Temp.b

Typ.c

- 40 to 125 °C

- 40 to 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Power Supplies

Power Supply Current

I+

VIN = 0 or 5 V

Room

Full

14

100

µA

Negative Supply Current

I-

Room

Full

- 0.001

- 0.5

- 5

- 0.5

- 5

Ground Current

IGND

Room

Full

- 14

- 100

SPECIFICATIONS FOR DUAL SUPPLIES

SPECIFICATIONS FOR UNIPOLAR SUPPLIES

Parameter

Symbol

Test Conditions

Unless Specified

V+ = 12 V, V- = 0 V

VIN = 2.4 V, 0.8 V

a

Temp.b

Typ.c

- 40 to 125 °C

- 40 to 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

12

V

On-Resistance

RON

IS = - 10 mA, VD = 0 V to + 10 V

Room

Full

5.5

8.1

12.4

8.1

10.4

Ω

On-Resistance Match

ΔR

ON

IS = - 10 mA, VD = + 10 V

Room

Full

0.14

0.5

1

0.5

On-Resistance Flatness

RFLATNESS

IS = - 10 mA,

VD = 0 V, + 5 V, + 10 V

Room

Full

0.94

1.5

1.7

1.5

Dynamic Characteristics

Turn-On Time

tON

RL = 300 Ω, CL = 35 pF

VS = 8 V, See Figure 2

Room

Full

132

162

238

162

210

ns

Turn-Off Time

tOFF

Room

Full

61

91

117

91

105

Break-Before-Make

Time Delay

tD

DG456 only, VS = 8 V

RL = 300 Ω, CL = 35 pF

Room

70

Charge Injectione

Q

Vg = 0 V, Rg = 0 Ω, CL = 1 nF

Room

1

pC

Power Supplies

Power Supply Current

I+

V+ = 13.5 V, V- = 0 V

VIN = 0 or 5 V

Room

Full

25

100

µA

Negative Supply Current

I-

Room

Full

- 0.001

- 0.5

- 5

- 0.5

- 5

Ground Current

IGND

Room

Full

- 25

- 100

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