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DG200BDJ Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG200BDJ Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 71357 S-71155–Rev. C, 11-Jun-07 Vishay Siliconix DG200B TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted TEST CIRCUITS VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. rDS(on) vs. VD and Power Supply Voltages Leakage Current vs. Temperature - 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20 40 50 60 70 80 90 100 110 ± 5 V VD - Drain Voltage (V) ± 10 V ± 15 V ± 20 V 30 20 10 -55 25 45 5 -15 65 1 nA 100 pA 10 pA -35 1 pA 85 105 125 V+ = 15 V V- = - 15 V VS, VD = ± 14 V IS(off), ID(off) Temperature (°C) rDS(on) vs. VD and Temperature Leakage Currents vs. Analog Voltage 85 °C 0 10 20 30 40 50 -15 - 10 -5 0 5 10 15 VD - Drain Voltage (V) 125 °C 25 °C - 55 °C V+ = 15 V V- = - 15 V 60 70 80 90 100 -20 - 15 -10 - 5 0 5 10 15 20 40 20 0 - 20 - 40 IS(off), ID(off) ID(on) V+ = 22 V V- = - 22 V TA = 25 °C 30 10 - 10 - 30 Figure 2. Switching Time 50 % 0 V 3 V tOFF tON VO VS tr < 20 ns tf < 20 ns Logic Input Switch Input Switch Output 90 % CL 35 pF RL 1 k Ω VO = VS RL + rDS(on) RL VS = + 5 V VO V- V+ IN S D 3 V - 15 V GND + 15 V |
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