DG200BDJ datasheet(4/6 Pages) VISHAY

Part #	DG200BDJ

Description	Monolithic Dual SPST CMOS Analog Switch

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 71357

S-71155–Rev. C, 11-Jun-07

Vishay Siliconix

DG200B

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

TEST CIRCUITS

VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge

of output waveform.

rDS(on) vs. VD and Power Supply Voltages

Leakage Current vs. Temperature

- 20 - 16 - 12

- 8

- 4

0

4

8

12

16

20

40

50

60

70

80

90

100

110

± 5 V

VD - Drain Voltage (V)

± 10 V

± 15 V

± 20 V

30

20

10

-55

25

45

5

-15

65

1 nA

100 pA

10 pA

-35

1 pA

85

105 125

V+ = 15 V

V- = - 15 V

VS, VD = ± 14 V

IS(off), ID(off)

Temperature (°C)

rDS(on) vs. VD and Temperature

Leakage Currents vs. Analog Voltage

85 °C

0

10

20

30

40

50

-15

- 10

-5

0

5

10

15

VD - Drain Voltage (V)

125 °C

25 °C

- 55 °C

V+ = 15 V

V- = - 15 V

60

70

80

90

100

-20

- 15

-10

- 5

0

5

10

15

20

40

20

0

- 20

- 40

IS(off), ID(off)

ID(on)

V+ = 22 V

V- = - 22 V

TA = 25 °C

30

10

- 10

- 30

Figure 2. Switching Time

50 %

0 V

3 V

tOFF

tON

VO

VS

tr < 20 ns

tf < 20 ns

Logic

Input

Switch

Input

Switch

Output

90 %

CL

35 pF

RL

1 k

Ω

VO = VS

RL + rDS(on)

RL

VS = + 5 V

VO

V-

V+

IN

S

D

3 V

- 15 V

GND

+ 15 V

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