W8NB80 datasheet(3/5 Pages) STMICROELECTRONICS

Part #	W8NB80

Description	N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay Time

Rise Time

VDD = 400 V

ID = 3.5 A

RG = 4.7

Ω

VGS = 10 V

20

10

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 640 V

ID = 7.4 A VGS = 10 V

RG = 4.7

Ω

VGS = 10 V

40

10

18

52

nC

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 640 V

ID = 7A

RG = 4.7

Ω VGS = 10 V

15

25

ns

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM(

•)

Source-drain Current

(pulsed)

7.5

30

A

VSD (

∗)

Forward On Voltage

ISD = 7.5 A

VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 7.5 A

di/dt = 100 A/

µs

VDD = 100 V

Tj = 150

o C

730

5.5

15

ns

µC

A

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

•) Pulse width limited by safe operating area

STW8NB80

3/5

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