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W8NB80 Datasheet(PDF) 3 Page - STMicroelectronics |
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W8NB80 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on delay Time Rise Time VDD = 400 V ID = 3.5 A RG = 4.7 Ω VGS = 10 V 20 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V ID = 7.4 A VGS = 10 V RG = 4.7 Ω VGS = 10 V 40 10 18 52 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 640 V ID = 7A RG = 4.7 Ω VGS = 10 V 15 15 25 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 7.5 30 A A VSD ( ∗) Forward On Voltage ISD = 7.5 A VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7.5 A di/dt = 100 A/ µs VDD = 100 V Tj = 150 o C 730 5.5 15 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STW8NB80 3/5 |
Similar Part No. - W8NB80 |
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Similar Description - W8NB80 |
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