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DG401BDJ-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG401BDJ-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page DG401B/403B/405B Vishay Siliconix New Product Document Number: 73069 S-42444—Rev. A, 10-Jan-05 www.vishay.com 3 ABSOLUTE MAXIMUM RATINGS V+ to V− 44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V− 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputsa VS, VD (V−) − 0.3 V to (V+) +0.3 V . . . . . . . . . . . . . . . . . . . . . . . or 30 mA, whichever occurs first Current (Any Terminal) Continuous 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current, S or D (Pulsed 1 ms 10% duty) 100 mA . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature (DJ, DY Suffix) −65 to 125_C . . . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)b 16-Pin Plastic DIPc 450 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin SOICd 600 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Test Conditions Unless Specified Limits −40 to 85_C Parameter Symbol V+ = 15 V, V− = −15 V, VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full −15 15 V Drain-Source On-Resistance rDS(on) IS = −10 mA, VD = "10 V V+ = 13.5 V, V− = −13.5 V Room Full 23 45 55 W D Drain-Source On-Resistance DrDS(on) IS = −10 mA, VD = "5 V, 0 V V+ = 16.5 V, V− = −16.5 V Room Full 0.72 3 5 W Switch Off Leakage Current IS(off) V+ = 16.5, V− = −16.5 V Room Hot −0.5 −5 −0.01 0.5 5 Switch Off Leakage Current ID(off) V+ = 16.5, V− = −16.5 V VD = "15.5 V, VS = #15.5 V Room Hot −0.5 −5 −0.01 0.5 5 nA Channel On Leakage Current ID(on) V+ = 16.5 V, V− = −16.5 V VS = VD = "15.5 V Room Hot −1 −10 −0.04 1 10 Digital Control Input Current VIN Low IIL VIN under test = 0.8 V, All Other = 2.4 V Full −1 0.005 1 mA Input Current VIN High IIH VIN under test = 2.4 V, All Other = 0.8 V Full −1 0.005 1 mA Dynamic Characteristics Turn-On Time tON RL = 300 W , CL = 35 pF Room 100 150 Turn-Off Time tOFF RL = 300 W , CL = 35 pF See Figure 2 Room 60 100 ns Break-Before-Make Time Delay (DG403B) tD RL = 300 W , CL = 35 pF Room 5 12 Charge Injection Q CL = 10,000 pF, Vgen = 0 V, Rgen = 0 W Room 60 pC Off Isolation Reject Ratio OIRR RL = 100 W , CL = 5 pF Room −81.7 dB Channel-to-Channel Crosstalk XTALK RL = 100 W , CL = 5 pF f = 1 MHz Room −94.8 dB Source Off Capacitance CS(off) Room 12 Drain Off Capacitance CD(off) f = 1 MHz, VS = 0 V Room 12 pF Channel On Capacitance CD, CS(on) , S 0 Room 39 p Power Supplies Positive Supply Current I+ Room Full 0.250 0.5 1 Negative Supply Current I− V+ = 16.5 V, V− = −16.5 V VIN = 0 or 5 V Room Full −0.5 −1 0.25 mA Ground Current IGND IN Room Full −0.5 −1 0.25 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. |
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