DG309DY-T1-E3 datasheet(3/6 Pages) VISHAY

Part #	DG309DY-T1-E3

Description	Quad Monolithic SPST CMOS Analog Switches

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 70046

S-71155–Rev. F, 11-Jun-07

www.vishay.com

3

Vishay Siliconix

DG308A/DG309

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

Figure 1.

SPECIFICATIONSa

Parameter

Symbol

Test Conditions

Unless Specified

V+ = 15 V, V- = - 15 V

VIN = 3.5 V or 11 V

f

Tempb

Typc

A Suffix

- 55 to 125°C

C, D Suffix

Unit

Mind

Maxd

Mind

Maxd

Analog Switch

Analog Signal Rangee

VANALOG

Full

- 15

15

- 15

15

V

Drain-Source

On-Resistance

rDS(on)

VD = ± 10 V, IS = 1 mA

Room

Full

60

100

150

100

125

Ω

Source Off Leakage Current

IS(off)

VS = ± 14 V, VD = ± 14 V

Room

Full

± 0.1

- 1

100

1

100

- 5

- 100

5

100

nA

Drain Off Leakage Current

ID(off)

VD = ± 14 V, VS = ± 14 V

Room

Full

± 0.1

- 1

100

1

100

- 5

- 100

5

100

Drain On Leakage Current

ID(on)

VD = VS = ± 14 V

Room

Full

± 0.1

- 1

100

1

100

- 5

- 200

5

200

Digital Control

Input Current with

Input Voltage High

IINH

VIN = 15 V

Full

0.001

1

µA

Input Current with

Input Voltage Low

IINL

VIN = 0 V

Full

- 0.001

- 1

Input Capacitance

CIN

Room

8

pF

Dynamic Characteristics

Turn-On Time

tON

See Figure 2

Room

130

200

ns

Turn-Off Time

tOFF

Room

90

150

Charge Injection

Q

CL = 0.01 µF, Rgen = 0 Ω, Vgen = 0 V,

Room

- 10

pC

Source-Off Capacitance

CS(off)

f = 140 kHz, VS, VD = 0 V

Room

11

pF

Drain-Off Capacitance

CD(off)

Room

8

Channel-On Capacitance

CD(on)

Room

27

Off-Isolationf

OIRR

RL = 75 Ω, VS = 2 Vp-p, f = 500 kHz

Room

78

dB

Level

Shift/

Drive

VIN

S

V+

GND

V-

D

V-

V+

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