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DG412DJ-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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DG412DJ-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 70050 S-71241–Rev. E, 25-Jun-07 www.vishay.com 3 Vishay Siliconix DG411/412/413 SPECIFICATIONSa Parameter Symbol Test Conditions Unless Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V f Tempb Typc A Suffix - 55 to 125 °C D Suffix - 40 to 85 °C Unit Mind Maxd Mind Maxd Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source On-Resistance rDS(on) V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = ± 8.5 V Room Full 25 35 45 35 45 Ω Switch Off Leakage Current IS(off) V+ = 16.5, V- = - 16.5 V VD = ± 15.5 V, VS = ± 15.5 V Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 nA ID(off) Room Full ± 0.1 - 0.25 - 20 0.25 20 - 0.25 - 5 0.25 5 Channel On Leakage Current ID(on) V+ = 16.5 V, V- = - 16.5 V VS = VD = ± 15.5 V Room Full ± 0.1 - 0.4 - 40 0.4 40 - 0.4 - 10 0.4 10 Digital Control Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 µA Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Dynamic Characteristics Turn-On Time tON RL = 300 Ω, CL = 35 pF VS = ± 10 V, See Figure 2 Room Full 110 175 240 175 220 ns Turn-Off Time tOFF Room Full 100 145 160 145 160 Break-Before-Make Time Delay tD DG413 Only, VS = 10 V RL = 300 Ω, CL = 35 pF Room 25 Charge Injection Q Vg = 0 V, Rg = 0 Ω CL = 10 nF Room 5 pC Off Isolatione OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room 68 dB Channel-to-Channel Crosstalke XTALK Room 85 Source Off Capacitancee CS(off) f = 1 MHz Room 9 pF Drain Off Capacitancee CD(off) Room 9 Channel On Capacitancee CD(on) Room 35 Power Supplies Positive Supply Current I+ V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full 0.0001 1 5 1 5 µA Negative Supply Current I- Room Full - 0.0001 - 1 - 5 - 1 - 5 Logic Supply Current IL Room Full 0.0001 1 5 1 5 Ground Current IGND Room Full - 0.0001 - 1 - 5 - 1 - 5 |
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Similar Description - DG412DJ-E3 |
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