Electronic Components Datasheet Search |
|
DG2016DQ-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
|
DG2016DQ-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 72030 S-71009-Rev. C, 14-May-07 www.vishay.com 3 Vishay Siliconix DG2016/DG2026 Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. f. Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 V e Tempa Limits - 40 to 85 °C Unit Minb Typc Maxb Analog Switch Analog Signal Ranged VNO, VNC VCOM Full 0 V+ V On-Resistance rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 2.4 4.0 4.3 Ω rON Flatness rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 1.2 Switch Off Leakage Current INO(off) INC(off) V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V Room Full - 1 - 10 1 10 nA ICOM(off) Room Full - 1 - 10 1 10 Channel-On Leakage Current ICOM(on) V+ = 5.5 V, VNO, VNC = VCOM =1 V/4.5 V Room Full - 1 - 10 1 10 Digital Control Input High Voltaged VINH Full 2.0 V Input Low Voltage VINL Full 0.8 Input Capacitance Cin Full 5 pF Input Current IINL or IINH VIN = 0 or V+ Full 1 1 µA Dynamic Characteristics Turn-On Time tON VNO or VNC = 3 V, RL = 50 Ω, CL = 35 pF Room Full 23 48 52 ns Turn-Off Time tOFF Room Full 833 35 Break-Before-Make Time td Full 1 Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω Room 79 pC Off-Isolationd OIRR RL = 50 Ω, CL = 5 pF, f = 1 MHz Room - 81 dB Crosstalkd XTALK Room - 82 Source-Off Capacitanced CNO(off) VIN = 0 or V+, f = 1 MHz Room 14 pF CNC(off) Room 14 Channel-On Capacitanced CNO(on) Room 48 CNC(on Room 44 Power Supply Power Supply Range V+ 1.8 5.5 V Power Supply Current I+ VIN = 0 or V+ Full 0.01 1.0 µA |
Similar Part No. - DG2016DQ-T1-E3 |
|
Similar Description - DG2016DQ-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |