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STX112 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STX112
Description  SILICON NPN POWER DARLINGTON TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX112, STX117
Electrical characteristics
Doc ID 6881 Rev 4
3/9
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Note:
For PNP types voltage and current values are negative.
2.1
Typical characteristic (curves)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 100 V
-
1
mA
ICEO
Collector cut-off current
(IB = 0)
VCE = 50 V
-
2
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
-
2
mA
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage (IB = 0)
IC = 30 mA
100
-
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 2 A
IB = 8 mA
-
2.5
V
VBE(on)
Base-emitter on voltage
IC = 2 A
VCE = 4 V
-
2.8
V
hFE
(1)
DC current gain
IC = 1 A_ _
VCE = 4 V
1000
-
IC = 2 A_
VCE = 4 V
500
-
Figure 2.
DC current gain
(VCE = 3 V NPN)
Figure 3.
DC current gain
(VCE = - 3 V PNP)




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