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STX13003 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STX13003
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
83.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 700V
VCE = 700V
Tj = 125
oC
1
5
mA
mA
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 mA
9
18
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
IC = 1 A
IB = 0.25 A
IC = 1.5 A
IB = 0.5 A
0.5
1
3
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
IC = 1 A
IB = 0.25 A
1
1.2
V
V
hFE
DC Current Gain
IC = 0.5 A
VCE = 2 V
IC = 1 A
VCE = 2 V
8
5
35
25
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
IC = 1 A
VCC = 125 V
IB1 = 0.2 A
IB2 = -0.2 A
Tp= 25
µs
1
4
0.7
µs
µs
µs
ts
INDUCTIVE LOAD
Storage Time
IC = 1 A
IB1 = 0.2 A
VBE = -5 V
L = 50 mH
Vclamp = 300 V
0.8
µs
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
Safe Operating Area
Output Characteristics
STX13003
2/7




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