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STX13005-AP Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STX13005-AP
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX13005 / STX13005-AP
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
* Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %.
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
44.6
150
°C/W
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE =0)
VCE = 700 V
VCE = 700 V
Tj =100 °C
1
5
mA
mA
ICEO
Collector Cut-off
Current (IB =0)
VCE = 400 V
1
mA
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC =0)
IE =10mA
9
18
V
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB =0)
IC = 10 mA
400
V
VCE(sat)*
Collector-Emitter
Saturation Voltage
IC =1A
IC =2A
IC =3A
IB =200 mA
IB =500 mA
IB =750 mA
0.5
0.6
5
V
V
V
VBE(sat)*
Base-Emitter
Saturation Voltage
IC =1A
IC =2A
IB =200 mA
IB =500 mA
1.2
1.6
V
V
hFE*
DC Current Gain
IC =1A
IC =2A
VCE =5 V
VCE =5 V
10
8
30
24
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC =2A
IB1 =-IB2 = 400 mA
(See Figure 1)
VCC = 125 V
tp =30 µs
1.65
260
µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC =1A
IB1 = 200 mA
L = 50 mH
(See Figure 2)
Vclamp = 300 V
VBE(off) =-5 V
RBB =0
0.8
150
µs
ns




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