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STX83003 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STX83003
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
83.3
200
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 700V
VCE = 700V
Tj = 125
oC
1
5
mA
mA
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 mA
12
18
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
L = 25 mH
400
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
IC = 0.35 A
IB = 50 mA
0.5
1
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.1 A
1
V
hFE
DC Current Gain
IC = 10 mA
VCE = 5 V
IC = 0.35 A
VCE = 5 V
IC = 1 A
VCE = 5 V
10
16
4
25
32
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
IC = 0.35 A
VCC = 125 V
IB1 = 70 mA
IB2 = -70 mA
Tp
≥ 25 µs
(see figure 2)
1.5
100
2.2
0.2
2.9
ns
µs
µs
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 0.5 A
IB1 = 0.1 A
VBE(off) = -5 V
L = 10 mH
Vclamp = 300 V
(see figure 1)
450
90
ns
ns
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
STX83003
2/7




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