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STX93003 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STX93003
Description  HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STX93003
HIGH VOLTAGE FAST-SWITCHING
PNP POWER TRANSISTOR
s
ST93003 SILICON IN TO-92 PACKAGE
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial
Planar
technology
for
high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX93003 is expressly designed for a new
solution to be used in compact fluorescent lamps,
where it is coupled with the STX83003, its
complementary NPN transistor.
Ā®
INTERNAL SCHEMATIC DIAGRAM
October 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
-500
V
VCEO
Collector-Emitter Voltage (IB = 0)
-400
V
VEBO
Emitter-Base Voltage (IC = 0)
(IC = 0,
IB = -0.5 A,
tp < 10
Āµs, Tj < 150oC)
V(BR)EBO
V
IC
Collector Current
-1
A
ICM
Collector Peak Current (tp < 5 ms)
-3
A
IB
Base Current
-0.5
A
IBM
Base Peak Current (tp < 5 ms)
-1.5
A
Ptot
Total Dissipation at TC = 25
oC
1.5
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
TO-92
1/7




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