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STZT2222A Datasheet(PDF) 3 Page - STMicroelectronics |
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STZT2222A Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit hfe ∗∗ Small Signal Current Gain IC = 1 mA VCE = 10 V f = 1 KHz IC = 10 mA VCE = 10 V f = 1 KHz 50 75 300 375 K Ω hie ∗∗ Input Impedance IC = 1 mA VCE = 10 V f = 1 KHz IC = 10 mA VCE = 10 V f = 1 KHz 2 0.25 8 1.25 hre ∗∗ Reverse Voltage Ratio IC = 1 mA VCE = 10 V f = 1 KHz IC = 10 mA VCE = 10 V f = 1 KHz 8 4 10 -4 hoe ∗∗ Output Impedance IC = 1 mA VCE = 10 V f = 1 KHz IC = 10 mA VCE = 10 V f = 1 KHz 5 25 35 375 S fT Transition Frequency IC = 10 mA VCE = 10 V f = 100 MHz for STZT2222 for STZT2222A 250 300 MHz MHz CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 8 pF CEBO Emitter-Base Capacitance IC = 0 VEB = 0.5 V f = 1 MHz for STZT2222 for STZT2222A 30 25 pF pF NF Noise Figure f = 1 KHz ∆F = 200 Hz RG = 1KΩ IC = 0.1 mA VCE = 10 V 4dB td Delay Time IC = 150 mA IC1 = 15 mA VBE = -0.5 V 10 ns tr Rise Time 25 ns ts Storage Time IC = 150 mA IC1 = 15 mA IB2 = 15 mA 225 ns tf Fall Time 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % ∗∗ Only for STZT2222A STZT2222/STZT2222A 3/5 |
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