Electronic Components Datasheet Search |
|
1N4448W-V-GS08 Datasheet(PDF) 2 Page - Vishay Siliconix |
|
1N4448W-V-GS08 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85722 Rev. 1.3, 12-Dec-05 1N4448W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Rectification Efficieny Measurement Circuit Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 3501) K/W Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 5 mA VF 0.62 0.72 V IF = 100 mA VF 1V Leakage current VR = 20 V IR 25 nA VR = 75 V IR 5µA VR = 20 V, TJ = 150 °C IR 50 µA Capacitance VF = VR = 0 V 4 pF Reverse recovery time IF = 10 mA to IR = 10 mA, VR = 6 V, RL = 100 Ω trr 4ns Rectification efficiency f = 100 MHz, VRF = 2 V ην 0.45 17436 60 Ω 5k Ω 2nF VO V =2V RF |
Similar Part No. - 1N4448W-V-GS08 |
|
Similar Description - 1N4448W-V-GS08 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |