DG4157DL-T1-E3 datasheet(2/8 Pages) VISHAY

Part #	DG4157DL-T1-E3

Description	Low Voltage, 1-Ω Single SPDT Analog Switch (1:2 Multiplexer) with Power Down Protection

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 68800

S-82827-Rev. C, 24-Nov-08

Vishay Siliconix

DG4157

Notes:

a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 3.1 mW/°C above 70 °C.

d. Derate 2.0 mW/°C above 70 °C.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

Reference V+ to GND

- 0.3 to + 6

V

S, A, Ba

- 0.3 to (V+ + 0.3)

Continuous Current (Any terminal)

± 200

mA

Peak Current (Pulsed at 1 ms, 10 % duty cycle)

± 400

Storage Temperature

D Suffix

- 65 to 150

°C

Power Dissipation (Packages)b

SC-70-6Lc

250

mW

miniQFN-6Ld

160

SPECIFICATIONS

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 3.0 V, VIN = 0 V or V+

e

Temp.a

Limits

- 40 °C to 85 °C

Unit

Min.b

Typ.c

Max.b

DC Characteristics

On Resistance

RON

V+ = 2.7 V, B0 or B1 = 1.5 V, IO = 100 mA

Room

1.7

2.5

Ω

Full

3

V+ = 4.5 V, B0 or B1 = 3.5 V, IO = 100 mA

Room

0.95

1.2

Full

1.4

On Resistance Flatness

RFLATNESS

V+ = 2.7 V, B0 or B1 = 0.75 V, 1.5 V,

IO = 100 mA

Room

0.2

V+ = 4.5 V, B0 or B1 = 1 V, 3.5 V,

IO = 100 mA

Room

0.14

0.3

Full

0.4

On Resistance Match

ΔR

ON

V+ = 2.7 V, B0 or B1 = 1.5 V,

IO = 100 mA

Room

0.04

V+ = 4.5 V, B0 or B1 = 3.5 V,

IO = 100 mA

Room

0.05

0.12

Full

0.15

Switch OFF Leakage Current

IOFF

V+ = 5.5 V, A = 1 V, 4.5 V

B0 or B1 = 4.5 V, 1 V or Floating

Room

- 2

2

nA

Full

- 20

20

Switch ON Leakage Current

ION

Room

- 4

4

Full

- 40

40

Digital Control

Input, High Voltage

VINH

V+ = 2.7 V to 5.5 V

Full

1.4

V

Input, Low Voltage

VINL

Full

0.4

Input Current

IINH, IINL

VIN = 0 or V+

Full

- 1

1

µA

Power Supply

Power Supply Range

V+

Full

1.8

5.5

V

Quiescent Supply Current

I+

V+ = 5.5 V, VIN = 0 V, 5.5 V

Room

0.05

0.5

µA

Full

1

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