DG9461DY-T1 datasheet(3/8 Pages) VISHAY

Part #	DG9461DY-T1

Description	Low-Voltage Single SPDT Analog Switch

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 8 page

Document Number: 70832

S-71009–Rev. C, 14-May-07

www.vishay.com

3

Vishay Siliconix

DG9461

Notes:

a. Room = 25 °C, Full = as determined by the operating suffix.

b. Typical values are for design aid only, not guaranteed nor subject to production testing.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Guarantee by design, nor subjected to production test.

e. VIN = input voltage to perform proper function.

f. Difference of min and max values.

g. Guraranteed by 5 V leakage testing, not production tested.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (V+ = 5 V)

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 5 V, ± 10 %, VIN = 0.8 or 2.4 V

e

Tempa

D Suffix

- 40 to 85 °C

Unit

Minc

Typb

Maxc

Analog Switch

Analog Signal Ranged

VANALOG

Full

0

5

V

Drain-Source On-Resistance

rDS(on)

VNO or VNC = 3.5 V, V+ = 4.5 V

ICOM = 5 mA

Room

Full

30

60

75

Ω

rDS(on)Match

d

Δr

DS(on)

VNO or VNC = 1.5 V

Room

0.4

2

rDS(on) Flatness

f

rDS(on)

Flatness

VNO or VNC = 1,2 and 3 V

Room

2

6

NO or NC Off Leakage Current

INO/NC(off)

VNO or VNC = 1 V/4 V, VCOM = 4 V/1 V

Room

Full

- 100

- 5000

10

100

5000

pA

COM Off Leakage Current

ICOM(off)

VCOM = 1 V/4 V, VNO or VNC = 4 V/1 V

Room

Full

- 100

- 5000

10

100

5000

Channel-On Leakage Current

ICOM(on)

VCOM = VNO or VNC = 1 V/4 V

Room

Full

- 200

- 10000

200

10000

Digital Control

Input Current

IINL or IINH

Full

1

µA

Dynamic Characteristics

Turn-On Time

tON

VNO or VNC = 3.0 V

Room

Full

35

75

150

ns

Turn-Off Time

tOFF

Room

Full

20

50

100

Break-Before-Make Time

td

Room

3

10

Charge Injection

QINJ

CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω

Room

2

5

pC

Off-Isolation

OIRR

RL = 50 Ω, CL = 5 pF, f = 1 MHz

Room

- 74

dB

NC and NO Capacitance

C(off)

f = 1 MHz

Room

- 7

pF

Channel-On Capacitance

CD(on)

Room

32

Power Supply

Power Supply Range

V+

2.7

12

V

Power Supply Current

I+

V+ = 5.5 V, VIN = 0 or 5.5 V

1µA

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