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STD4LNK60Z Datasheet(PDF) 5 Page - STMicroelectronics |
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STD4LNK60Z Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 11 page STD4LNK60Z - STF4LNK60Z Electrical characteristics 5/11 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by package Source-drain current Source-drain current (pulsed) 3.3 13.2 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 3.3 A, VGS=0 TBD V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.3 A, di/dt = 100 A/µs, VDD=480 V, Tj=150°C (see Figure 7) TBD TBD TBD ns nC A |
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